The report “Super Junction MOSFET Market by FAB Technology (Multiple-Epitaxy, Deep-Trench), Packaging Technology Material (Substrate, Transition Layer, Electrode), Application (Power Supply, Display, Lighting, EV/HEV, Industrial) & by Geography- Global Trends & Forecasts to 2013 – 2020″ by MarketsandMarkets is now available at RnRMarketResearch.com. Contact email@example.com with Super Junction MOSFET Market by FAB Technology (Multiple-Epitaxy, Deep-Trench), Packaging Technology Material (Substrate, Transition Layer, Electrode), Application (Power Supply, Display, Lighting, EV/HEV, Industrial) & by Geography- Global Trends & Forecasts to 2013 – 2020 in subject line and your contact details to purchase this report or get your questions answered.
Super junction MOSFET devices currently shares only 2% to 3% of the total power semiconductor device market, which is a $31 billion market. With the popularity and technological innovations in the fabrication and packaging of super junction devices, the scenario in coming five years would be different. The growth of SJ-MOSFET is estimated to be 13.6% from 2013 to 2020. This escalation is developing the need to analyze, review and to forecast the growth of SJ-MOSFET market. High ON-state resistance, better performance, low heat dissipation, high switching frequency and low cost are some factors that are increasing the popularity of SJ-MOSFET’s amongst the manufacturers.
The research published on SJ-MOSFET covers significant fabrication methods such as Multiple-Epitaxy and Deep-Trench that are helping to have cheaper and simpler manufacturing of SJ-MOSFET’s. New packaging methods are delivering high compactness and low heat dissipation property. There are several important trends which have been driving the technological innovations in the power semiconductor industry since its early days, and which, directly or indirectly, are driving the SJ-MOSFET’s market, currently. The first and principal trend that is driving the market is the size reduction of the SJ-MOSFET as compared to the planar MOSFET’s Power savings, high switching frequency are the other technological trends that still remain as strong undercurrents.
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The study elucidates the situation of SJ-MOSFET in electric vehicles and hybrid electric vehicles markets, and shows application market of SJ MOSFET in DC/DC converters, chargers, industrial, display and lighting applications with accurate market metrics. The study clarifies that the power supply applications are the highest market sharing and growing application market of SJ-MOSFET in 2013, and no doubt it will continue its growth till 2020.
Lastly, the SJ-MOSFET research study is segmented on the basis of geography in to North Americas, Europe, the Asia-Pacific (APAC), and Rest of the World (ROW). Among these, Germany, China, Japan, and U.S. are the highest market sharing countries in SJ-MOSFET market.
Complete report spread across 243 pages available @ http://www.rnrmarketresearch.com/super-junction-mosfet-market-by-fab-technology-multiple-epitaxy-deep-trench-packaging-technology-material-substrate-transition-layer-electrode-application-power-supply-display-lighting-ev-market-report.html .
Apart from the market segmentation, analysis and the respective data, the report also includes qualitative analysis of various market dynamics such as, drivers, restraints, opportunities, burning issues, and winning imperatives. The report includes profiles of prominent market players in the display materials segment and display manufacturers with their respective company market share analysis. The study analyzes the new strategies and technological roadmaps, provides up-to-date market metrics, profile the different segments of the SJ MOSFET market and situation analysis of SJ-MOSFET technology against current and future competition.
Major companies that are covered in this report are Infineon Technologies AG (Germany), STMicroelectronics N.V. (Switzerland), Toshiba Corporation (Japan), Vishay Intertechnology, Inc. (U.S.), Alpha & Omega Semiconductor Ltd. (U.S.), Fairchild Semiconductor International, Inc. (U.S.), Efficient Power Conversion Corporation (U.S.), Fujitsu Corporation (Japan), Fuji Electric Co., Ltd. (Japan), IceMOS Technology Corporation (U.S.), International Rectifier (U.S.), NXP Semiconductors (Netherlands), ON Semiconductor (U.S.) and Rohm Co., Ltd. (Japan).
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